US 8,785,938 B2 · Method for forming polycrystalline film, polycrystalline film and thin film transistor fabricated from the polycrystalline film

Abstract

A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer.

Claims19

Dependent claims

A method for forming a polycrystalline film, comprising steps of:

providing a substrate;
forming a thermal conductor layer on the substrate;
etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern;
forming a seed layer on the thermal conductor layer and the substrate;
etching the seed layer to form seed crystals on both sidewalls of the thermal conductor layer;
forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals;
etching the amorphous layer;
and
recrystallizing the amorphous layer to form a polycrystalline layer.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/583,851Filed 2 Aug 2012

Priority

CN 2012 1 012097123 Apr 2012

Published

US 2013/0277677 A124 Oct 2013

Granted

22 Jul 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 30/6731
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: top-gate only TFTs
H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6745
Silicon: polycrystalline or microcrystalline silicon

Method for forming polycrystalline film, polycrystalline film and thin film transistor fabricated from the polycrystalline film

Life of this patent

Method for forming polycrystalline film, polycrystalline film and thin film transistor fabricated from the polycrystalline film

Life of this patent

Abstract

Claims19