Organic light-emitting display apparatus and method of manufacturing the same

A method of manufacturing an organic light-emitting display apparatus, the method comprising:

• performing a first mask process for forming an active layer of a thin film transistor and for forming a lower electrode of a capacitor, the lower electrode formed on the same layer as the active layer;
• performing a second mask process for forming a first insulating layer on the resultant structure of the first mask process, for forming a first gate electrode of the thin film transistor, an upper electrode of the capacitor and a pixel electrode of a pixel unit by patterning a transparent conductive material layer, and for forming a second gate electrode of the thin film transistor by patterning a first metal layer after sequentially forming the transparent conductive material layer and the first metal layer on the first insulating layer, a gate electrode of the thin film transistor comprising the first gate electrode disposed on the active layer and the second gate electrode formed on the first gate electrode, the pixel electrode formed on the same layer as the first gate electrode, the upper electrode disposed on the lower electrode and formed on the same layer as the first gate electrode, the lower electrode and the upper electrode forming the capacitor;
• performing a third mask process for forming a second insulating layer on the resultant structure of the second mask process, and for forming contact holes that expose source and drain regions of the active layer and the pixel electrode;
• performing a fourth mask process for sequentially forming a second metal layer and a passivation layer on the resultant structure of the third mask process, and for forming source and drain electrodes connected to the active layer and a wiring formed on the same layer as the source and drain electrodes by patterning the second metal layer and the passivation layer, the thin film transistor comprising the active layer, the gate electrode, and the source and drain electrodes electrically connected to the active layer, the passivation layer formed on upper surfaces of the source and drain electrodes and formed on an upper surface of the wiring that is formed on the same layer as the source and drain electrodes;
• performing a fifth mask process for forming an organic insulating layer on the resultant structure of the fourth mask process, and for forming an opening on the organic insulating layer to expose the pixel electrode, the organic insulating layer being formed on the passivation layer and covering the thin film transistor, the organic insulating layer comprising the opening that exposes an upper surface of the pixel electrode, the organic insulating layer directly contacting the passivation layer, the organic insulating layer directly contacting the upper electrode;
• and
• sequentially forming a light-emitting layer and a facing electrode on the pixel electrode after performing the fifth mask process, the light-emitting layer formed on the pixel electrode, the facing electrode being formed on the light-emitting layer, and being formed to directly contact the organic insulating layer to face the pixel electrode.