US 8,785,932 B2 · IR sensing transistor and manufacturing method of display device including the same

Abstract

An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

Claims12

Dependent claims

An IR sensing transistor, comprising:

a light blocking layer formed on a substrate and configured to act as a gate of the IR sensing transistor;
a gate insulating layer formed on the light blocking layer;
a semiconductor formed on the gate insulating layer;
a pair of ohmic contact members formed on the semiconductor;
a source electrode and a drain electrode formed on respective ones of the ohmic contact members;
a passivation layer formed on the source electrode and the drain electrode;
and
a gate electrode formed on the passivation layer,
wherein substantially all of the gate insulating layer lies on the light blocking layer.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/182,235Filed 13 Jul 2011

Priority

KR 10-2010-01216451 Dec 2010

Published

US 2012/0138929 A17 Jun 2012

Granted

22 Jul 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

G02F 1/13338
Constructional arrangements; Manufacturing methods: input devices, e.g. touch panels
G06F 3/042
Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means: by opto-electronic means
H10D 30/6723
Having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device: having…
H10D 30/673
Characterised by the electrodes: characterised by the shapes, relative sizes or dispositions of the gate electrodes

IR sensing transistor and manufacturing method of display device including the same

Life of this patent

IR sensing transistor and manufacturing method of display device including the same

Life of this patent

Abstract

Claims12