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US 8,785,927 B2Granted
Laminate structure including oxide semiconductor thin film layer, and thin film transistor
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuaki Ebata, Shigekazu Tomai, Yuki Tsuruma, Shigeo Matsuzaki, Koki Yano
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Abstract
A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 μm or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.
Claims6
A stacked layer structure comprising an oxide layer and an insulating layer,
- the oxide layer having a carrier concentration of greater than 1013/cm3 to 1018/cm3 and an average crystal diameter of 1 μm to less than 27 μm;
- and
- the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.
Dependencies are inferred from the claim text.