Optoelectronic organic component and method for the production thereof

A method for the production of an optoelectronic organic component, comprising the method steps of:

• A) providing a first electrode,
• B) applying a first planarization layer to the first electrode,
• C) applying a first injection layer to the first planarization layer,
• D) applying an organic functional layer to the first injection layer,
• E) applying a second electrode to the organic functional layer,
• wherein in the case that the first electrode is an anode the following applies for the energy levels:
• EF−EHOMO,Inj.≦EF−EHOMO,Plan. and EF−EHOMO,Inj.<EF−EHOMO,Funk. or
• in the case that the first electrode is a cathode, the following applies for the energy levels:
• ELUMO,Inj.−EF≦ELUMO,Plan.−EF and ELUMO,Inj.−EF<ELUMO,Funk.−EF,
• wherein EF is the fermi energy, EHOMO is the energy of the highest occupied energy level of the respective layer and ELUMO is the energy of the lowest unoccupied energy level of the respective layer.

An optoelectronic organic component, comprising:

• a first electrode;
• a first planarization layer which is disposed on the first electrode;
• a first injection layer which is disposed on the first planarization layer;
• an organic functional layer which is disposed on the first injection layer;
• a second electrode which is disposed on the organic functional layer;
• a second planarization layer which is disposed between the second electrode and the organic functional layer,
• a second injection layer which is disposed between the second planarization layer and the organic functional layer,
• wherein the first electrode is an anode with the following energy levels:
• EF−EHOMO,Inj.≦EF−EHOMO,Plan. and EF−EHOMO,Inj.<EF−EHOMO,Funk. and
• the second electrode is a cathode with the following energy levels:
• ELUMO,Inj.−EF≦ELUMO,Plan.−EF and ELUMO,Inj.−EF<ELUMO,Funk.−EF,
• wherein EF is the fermi energy, EHOMO is the energy of the highest occupied energy level of the respective layer and ELUMO is the energy of the lowest unoccupied energy level of the respective layer.