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US 8,785,913 B2Granted
Buffer bilayers for electronic devices
AssigneeE. I. Du Pont de Nemours and Company
InventorsChe-Hsiung Hsu, Chi Zhang
Life of this patent
Estimating the term…
Abstract
The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer which is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.
Claims16
A buffer bilayer consisting of:
- a first layer comprising (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer, and
- a second layer consisting of a reacted layer of a metal, wherein the metal is selected from the group consisting of transition metals, Group 13 metals, Group 14 metals, and lanthanide metals.
Dependencies are inferred from the claim text.