Graphene electronic device including a plurality of graphene channel layers

A graphene electronic device comprising:

• an insulating layer covering a substrate;
• a plurality of graphene channel layers on the substrate;
• a source electrode connected to one edge of each of the plurality of the graphene channel layers;
• a drain electrode connected to another edge of each of the plurality of the graphene channel layers;
• a first gate insulating film covering the plurality of the graphene channel layers between the source electrode and the drain electrode;
• a second gate insulating film between the plurality of the graphene channel layers;
• and
• a gate electrode on the first gate insulating film,
• wherein the plurality of graphene channel layers includes a first graphene channel layer on the second gate insulating film and a second graphene channel layer on the insulating layer, the second gate insulating film is on the second graphene channel layer, and each of the first graphene channel layer and the second graphene channel layer has a width in a range of 1 nm to 20 nm, and
• wherein the second graphene channel layer has a length greater than that of the first graphene channel layer.