Thin film transistor, display device including the same, and method of manufacturing the display device

A display device, comprising:

• a substrate having a first region and a second region;
• a gate electrode on each of the first region and second region of the substrate, respectively;
• a gate insulating layer on the gate electrode;
• semiconductor layers on the gate insulating layer in the first region and second regions of the substrate, respectively;
• and
• source/drain electrodes electrically connected with the semiconductor layers on the first region and the second region of the substrate, respectively,
• wherein:
• the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å,
• each of the semiconductor layers has a primary grain boundary, and
• a distance between the primary grain boundaries of the respective semiconductor layers is about 2.75 μm to about 3 μm.

A method of manufacturing a display device, the method comprising:

• providing a substrate including a first region and a second region;
• forming gate electrodes on the first region and second region of the substrate, respectively;
• forming a gate insulating layer on the gate electrodes;
• forming semiconductor layers on the gate insulating layer on the first region and second region of the substrate, respectively;
• forming source/drain regions on certain regions of the semiconductor layers on the first region and second region of the substrate, respectively;
• and
• forming source/drain electrodes in the first region and second region of the substrate, respectively, the source/drain electrodes being electrically connected with the semiconductor layers,
• wherein:
• the gate electrodes have a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å,
• each of the semiconductor layers has a primary grain boundary, and
• a distance between the primary grain boundaries of the respective semiconductor layers is about 2.75 μm to about 3 μm.