Amber light-emitting diode comprising a group III-nitride nanowire active region

A light-emitting diode, comprising:

• a substrate having a frontside and a backside;
• an n-type base grown on the frontside of the substrate;
• a core-shell structure on the n-type base, comprising an array of vertically aligned faceted n-type nanowire cores, each core surrounded by a radially grown Group III-nitride multiple quantum well shell layer providing a core-shell nanowire;
• a p-type canopy layer grown on all crystal facets of the core-shell nanowires, and that is coalesced at the top providing a continuous top surface, wherein the top surface of the canopy layer is faceted on a plurality of crystal planes of the nanowire cores, thereby providing a continuous film that electrically connects the tops and sides of all the nanowires, further providing a void between adjacent n-type nanowire cores and between the continuous top surface and the n-type base;
• and
• a p-contact to the p-type canopy layer and an n-contact to the n-type base for applying a voltage across the core-shell structure and extracting electroluminescent emitted light therefrom.