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US 8,785,902 B2Granted
Resistive memory device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsSeok-Pyo Song, Yu-Jin Lee
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Abstract
A resistive memory device includes a lower electrode formed on a substrate, a resistive layer formed on the lower electrode, and an upper electrode on the resistive layer, wherein a lower portion of the upper electrode is narrower than an upper portion of the upper electrode.
Claims10
A resistive memory device comprising:
- a lower electrode formed over a substrate;
- a sacrificial layer formed over the lower electrode;
- a resistive layer buried in the sacrificial layer over the lower electrode;
- and
- an upper electrode formed over the resistive layer,
- wherein a top surface of the upper electrode protrudes higher than top surface of the resistive layer and the sacrificial layer, and
- wherein the top surface of the upper electrode has a rounded profile.
4 more elements
A resistive memory device comprising:
- a lower electrode formed over a substrate;
- a resistive layer formed over the lower electrode;
- and
- an upper electrode formed over the resistive layer,
- wherein a lower portion of the upper electrode is narrower than an upper portion of the upper electrode, and a top surface of the upper electrode has a rounded profile.
2 more elements
Dependencies are inferred from the claim text.