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US 8,785,900 B2Granted
Resistive memory and methods of processing resistive memory
AssigneeMicron Technology, Inc.
InventorDavid H. Wells
Life of this patent
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Abstract
Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include forming a resistive memory cell material on an electrode having an access device contact, and forming a heater electrode on the resistive memory cell material after forming the resistive memory cell material on the electrode such that the heater electrode is self-aligned to the resistive memory cell material.
Claims9
A resistive memory cell, comprising:
- a bottom electrode directly connected to an access device;
- a resistive memory cell material on the bottom electrode;
- a top electrode on the resistive memory cell material, wherein;
- the top electrode is a heater electrode;
- and
- the top electrode is self-aligned to the resistive memory cell material;
- a metal spacer on the resistive memory cell material and adjacent a sidewall of the top electrode;
- and
- a dielectric spacer on the resistive memory cell material and adjacent a sidewall of the metal spacer.
6 more elements
A memory device, comprising:
- an array of memory cells, wherein a number of the memory cells include:
- an electrode directly connected to an access device;
- a phase change random access memory (PCRAM) cell material on the electrode;
- a heater electrode on the PCRAM cell material, wherein the heater electrode is self-aligned to the PCRAM cell material;
- a metal spacer on the PCRAM cell material and adjacent a sidewall of the heater electrode;
- and
- a dielectric spacer on the PCRAM cell material and adjacent a sidewall of the metal spacer.
4 more elements
Dependencies are inferred from the claim text.