Back to results
US 8,785,899 B2Granted
Nonvolatile stacked memory structure with a resistance change film between a vertical electrode and horizontal electrodes
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Su Ju, Min-Kyu Yang, Eun-Mi Kim, Seong-Geon Park
Life of this patent
Estimating the term…
Abstract
According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.
Claims15
A nonvolatile memory device comprising:
- a plurality of first interlayer insulating films and a plurality of first electrodes stacked alternately;
- a second electrode penetrating the plurality of first interlayer insulating films and the plurality of first electrodes,
- the plurality of first electrodes and the second electrode having a work function difference of 0.5 to 6.0 eV;
- and
- a resistance change film between the plurality of first electrodes and the second electrode, wherein
- no memory cell selection elements are between the plurality of first electrodes and the resistance change film, and
- no memory cell selection elements are between the second electrode and the resistance change film.
4 more elements
A nonvolatile memory device comprising:
- at least one stacked structure including,
- 1 to N first electrodes spaced apart in a vertical direction, N being an integer greater than 1,
- a second electrode extending vertically through the 1 to N first electrodes,
- a resistive change film between the 1 to N first electrodes and the second electrode,
- the resistive change film containing oxygen ions, and
- a first barrier film between the resistive change film and the second electrode.
3 more elements
Dependencies are inferred from the claim text.