Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
AssigneeAdvanced Technology Materials, Inc.
InventorsRobert Kaim, Joseph D. Sweeney, Anthony M. Avila, Richard S. Ray
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Abstract
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
Claims54
A gas supply kit for an ion implantation system, comprising (i) a first gas storage and dispensing vessel holding a germanium dopant source gas, and (ii) a second gas storage and dispensing vessel holding a supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein at least one of the dopant gas and, when present, a co-species gas, is isotopically enriched above natural abundance level in at least one germanium isotope.
A method for enhancing operation of an ion implantation system, comprising providing for use in the ion implantation system (i) a first gas storage and dispensing vessel holding a germanium dopant source gas, and (ii) a second gas storage and dispensing vessel holding a supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein at least one of the dopant gas and, when present, a co-species gas, is isotopically enriched above natural abundance level in at least one germanium isotope.
A gas supply kit for an ion implantation system, comprising (i) a first gas storage and dispensing vessel holding dopant source gas comprising germanium tetrafluoride isotopically enriched in mass 72 isotope at an enrichment in a range of from 55% to 100%, and (ii) a second gas storage and dispensing vessel holding a supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein the dopant source gas is held in the first gas storage and dispensing vessel in an adsorbed state, a free gas state, or a liquefied gas state.
A method for enhancing operation of an ion implantation system, comprising providing for use in the ion implantation system (i) a first gas storage and dispensing vessel holding dopant source gas comprising germanium tetrafluoride isotopically enriched in mass 72 isotope at an enrichment in a range of from 55% to 100%, and (ii) a second gas storage and dispensing vessel holding a supplemental gas comprising at least one of a diluent gas and a co-species gas, wherein the dopant source gas is held in the first gas storage and dispensing vessel in an adsorbed state, a free gas state, or a liquefied gas state.
Dependencies are inferred from the claim text.