Photoelectric conversion device and energy conversion layer for photoelectric conversion device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshinobu Asami, Tomokazu Yokoi
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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshinobu Asami, Tomokazu Yokoi
Estimating the term…
A novel photoelectric conversion device in which energy of light can be effectively utilized and performance can be improved is provided. A photoelectric conversion device includes a photoelectric conversion element and an energy conversion layer provided on a light-receiving side of a photoelectric conversion layer included in the photoelectric conversion element. The energy conversion layer includes a plurality of first layers and a plurality of second layers. The first layer and the second layer are alternately stacked. The thickness of the first layer is greater than or equal to 0.5 nm and less than or equal to 10 nm, and the thickness of the second layer is greater than or equal to 0.5 nm and less than or equal to 10 nm. The second layer can be formed using a material having a larger energy band gap than that of a material used for the first layer.
A photoelectric conversion device comprising:
A photoelectric conversion device comprising:
Dependencies are inferred from the claim text.