Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process chamber configured to accommodate a substrate;
• a heater configured to heat the substrate in the process chamber;
• a first precursor gas supply system configured to supply a first precursor gas containing a predetermined element and a halogen group to the substrate in the process chamber;
• a second precursor gas supply system configured to supply a second precursor gas containing the predetermined element and an amino group to the substrate in the process chamber;
• a reaction gas supply system configured to supply a reaction gas containing a borazine compound to the substrate in the process chamber;
• a pressure adjusting unit configured to adjust an internal pressure of the process chamber;
• and
• a control unit configured to control the first precursor gas supply system, the second precursor gas supply system, the reaction gas supply system, the heater and the pressure adjusting unit such that a thin film containing the predetermined element, carbon, nitrogen and a borazine ring skeleton is formed on the substrate by performing a cycle for a first predetermined number of times, the cycle comprising:
• forming a first layer containing the predetermined element, the halogen group, carbon and nitrogen by performing supplying the first precursor gas to the substrate in the process chamber and supplying the second precursor gas to the substrate in the process chamber, for a second predetermined number of times;
• and
• forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying the reaction gas to the substrate in the process chamber and allowing the first layer to react with the borazine compound to modify the first layer under a condition in which the borazine ring skeleton in the borazine compound is maintained.