Back to results
US 8,785,329 B2Granted
Method for forming pattern and method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsShimon Maeda, Kenji Konomi
Life of this patent
Estimating the term…
Abstract
In a method for forming a pattern according to an embodiment, a first guide pattern and a second guide pattern for induced self organization of a DSA material are formed on substrate. On a first DSA condition, a first phase-separated pattern having regularity with respect to the first guide pattern is formed, and a first pattern is formed by processing the lower layer side. Subsequently, on a second DSA condition, a second phase-separated pattern having regularity with respect to the second guide pattern is formed, and a second pattern is formed by processing the lower layer side.
Claims20
A method for forming a pattern, comprising:
- forming a first guide pattern and a second guide pattern for induced self organization of a DSA material on a processing target film above a substrate;
- forming a first phase-separated pattern at a position corresponding to the first guide pattern on a first DSA condition that is capable of forming the first phase-separated pattern having regularity with respect to the first guide pattern and is incapable of forming a second phase-separated pattern having regularity with respect to the second guide pattern;
- forming a first on-substrate pattern by processing the processing target film, which is disposed in a lower layer side of the first phase-separated pattern, by using the first phase-separated pattern;
- forming the second phase-separated pattern at a position corresponding to the second guide pattern on a second DSA condition that is capable of forming the second phase-separated pattern having regularity with respect to the second guide pattern and is incapable of forming the first phase-separated pattern having regularity with respect to the first guide pattern;
- and
- forming a second on-substrate pattern by processing the processing target film, which is disposed in a lower layer side of the second phase-separated pattern, by using the second phase-separated pattern.
3 more elements
A method for forming a pattern, comprising:
- forming a first guide pattern and a second guide pattern for induced self organization of a DSA material on a processing target film above a substrate;
- forming first phase-separated patterns at positions corresponding to the first and second guide patterns on a first DSA condition that is capable of forming the first phase-separated patterns having regularity with respect to the first and second guide patterns;
- forming a first isolated hole pattern by processing the processing target film, which is disposed in a lower layer side of the first phase-separated patterns, by using the first phase-separated patterns;
- forming a second phase-separated pattern at a position corresponding to the second guide pattern on a second DSA condition that is capable of forming the second phase-separated pattern having regularity with respect to the second guide pattern and having a size larger than the first phase-separated pattern and is incapable of forming a phase-separated pattern having regularity with respect to the first guide pattern;
- and
- forming a second isolated hole pattern having a size larger than the first isolated hole pattern by processing the processing target film, which is disposed in a lower layer side of the second phase-separated pattern, by using the second phase-separated pattern.
3 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a first guide pattern and a second guide pattern for induced self organization of a DSA material on a processing target film above a substrate;
- forming a first phase-separated pattern at a position corresponding to the first guide pattern on a first DSA condition that is capable of forming the first phase-separated pattern having regularity with respect to the first guide pattern and is incapable of forming a second phase-separated pattern having regularity with respect to the second guide pattern;
- forming a first on-substrate pattern by processing the processing target film, which is disposed in a lower layer side of the first phase-separated pattern, by using the first phase-separated pattern;
- forming a second phase-separated pattern at a position corresponding to the second guide pattern on a second DSA condition that is capable of forming the second phase-separated pattern having regularity with respect to the second guide pattern and is incapable of forming the first phase-separated pattern having regularity with respect to the first guide pattern;
- and
- forming a second on-substrate pattern by processing the processing target film, which is disposed in a lower layer side of the second phase-separated pattern, by using the second phase-separated pattern.
3 more elements
Dependencies are inferred from the claim text.