Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a first sacrificial layer above a processed layer in first and second regions adjacent to each other in a first direction of a semiconductor substrate, the first sacrificial layer including a linear portion extending in the first direction and having a first width and a fringe portion of a flag shape provided in the second region and having a first dimension in a second direction crossing the first direction larger than the first width;
• forming a first sidewall film on a side face of the first sacrificial layer;
• forming at least a second sacrificial layer covering at least a portion of the first sidewall film in the second region so as to project to both sides in a direction parallel to a width direction of the portion of the first sidewall film from a side face of the portion and forming a third sacrificial layer having substantially a second width smaller than the first width on side faces of the first sidewall film having the second width and the second sacrificial layer, after the first sacrificial layer is removed;
• and
• forming second and third sidewall films having substantially the second width in such a way that each of the second and third sidewall films is adjacent to the first sidewall film across the third sacrificial layer by having a first interval corresponding to the second width in the first region and is adjacent to the first sidewall film across the second and third sacrificial layers by having a second interval larger than the first interval in the second region, wherein
• the first sacrificial layer is formed in such a way that a plurality of patterns are arranged along the second direction in the first region,
• the first sidewall film is formed on the side face of the first sacrificial layer with the second width,
• the second and third sidewall films are formed in such a way that each of the second and third sidewall films are adjacent to the first sidewall film across the third sacrificial layer in the first region,
• the first to third sidewall films as a whole have substantially ⅙ pitch in the second direction of the plurality of patterns of the first sacrificial layer in the first region.