Methods of separating solid state transducers from substrates and associated devices and systems
AssigneeMicron Technology, Inc.
InventorsMartin F. Schubert, Ming Zhang, Lifang Xu
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Abstract
Wafer-level processing of wafer assemblies with transducers is described herein. A method in accordance with some embodiments includes forming a solid state transducer device by forming one or more trenches to define solid state radiation transducers. An etching media is delivered in to the trenches to release the transducers from a growth substrate used to fabricate the transducers. A pad can hold the radiation transducers and promote distribution of the etching media through the trenches to underetch and release the transducers.
Claims30
A method of forming a solid state transducer device, the method comprising:
- forming at least one trench through a semiconductor material, the trench forming a boundary between individual transducers;
- and
- delivering an etching media through the trench and underetching material at an interface between a growth substrate and the individual transducers such that the individual transducers are separated from the growth substrate.
A method of forming a light-emitting device (LED), the method comprising:
- forming a LED on a growth substrate, the LED comprising a first semiconductor material, a second semiconductor material, and an active region;
- forming at least one trench through the LED to a sacrificial material over the growth substrate and between individual transducers of the LED;
- and
- delivering an etching media through the trench to an interface between the individual transducers and the growth substrate.
A method of forming a solid state transducer, comprising:
- providing a growth substrate and a transducer structure on the growth substrate, the transducer structure having a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials, the transducer structure including a plurality of individual transducers separated by at least one trench;
- and
- underetching between the growth substrate and the individual transducers from the trench between the individual transducers toward a center region of the individual transducers.
Dependencies are inferred from the claim text.