Interconnect structure for semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHui-Lin Chang, Hung Chun Tsai, Yung-Cheng Lu, Syun-Ming Jang
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Abstract
A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface, or is planar. The conductive material is silicided to form an alloy layer. The alloy layer comprises the first material and a second material of germanium, arsenic, tungsten, or gallium.
Claims17
A method of manufacturing a semiconductor device, the method comprising:
- forming a dielectric layer on a substrate;
- embedding a conductive material into the dielectric layer, the conductive material comprising a first material and having a recess, wherein the recess has a curved top surface;
- and
- siliciding the conductive material to form an alloy layer at least partially within the recess, the alloy layer comprising the first material and a second material, the second material comprising germanium, arsenic, tungsten, or gallium, wherein the siliciding the conductive material further comprises:
- introducing a first precursor material to the conductive material, the first precursor material being a silicon containing precursor material;
- and
- introducing a second precursor material to the conductive material, the second precursor material containing the second material.
A method of manufacturing a semiconductor device, the method comprising:
- embedding a conductor into a dielectric layer, the conductor comprising a first material and having a concave top surface;
- and
- forming a silicide layer on the conductor, the silicide layer comprising the first material and germanium, arsenic, tungsten, or gallium, wherein the forming the silicide layer further comprises:
- introducing a first precursor material to the conductor, the first precursor material being a silicon containing precursor material;
- and
- introducing a second precursor material to the conductor, the second precursor material containing the second material.
A method of manufacturing a semiconductor device, the method comprising;
- forming an opening in a dielectric layer over a substrate;
- embedding a first conductive material into the opening, the first conductive material having a curved top surface;
- and
- siliciding the curved top surface to form an alloy, the alloy comprising the first conductive material and germanium, arsenic, tungsten, or gallium, wherein the siliciding the curved top surface further comprises:
- introducing a first precursor material to the first conductive material, the first precursor material being a silicon containing precursor material;
- and
- introducing a second precursor material to the first conductive material, the second precursor material containing the second material.
Dependencies are inferred from the claim text.