Methods for forming fine patterns of a semiconductor device

A method of forming fine patterns, comprising:

• forming first hard mask patterns extending in a first direction on a lower layer;
• forming second hard mask patterns filling gap regions between the first hard mask patterns;
• forming first openings in each of the first hard mask patterns, a space between the first openings arranged in the first direction greater than a space between the first openings arranged in a second direction perpendicular to the first direction;
• forming second openings in each of the second hard mask patterns, the second openings spaced apart from the first openings in a diagonal direction with respect to the first direction;
• and
• transferring the first and second openings to the lower layer to form holes arranged in zigzag form.

A method of forming fine patterns, comprising:

• forming first mask patterns, extending in a first direction, on first hard mask patterns and second hard mask patterns, the first hard mask patterns on a lower layer extending in a second direction perpendicular to the first direction, the second hard mask patterns filling gap regions between the first hard mask patterns;
• etching the first hard mask patterns using the first mask patterns as etch masks to form first openings;
• forming second mask patterns filling the first openings and extending in the first direction;
• and
• etching the second hard mask patterns using the second mask patterns as etch masks to form second openings spaced apart from the first openings in a diagonal direction with respect to the second direction.