Method of manufacturing device having a blocking structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBor-Wen Chan, Hsueh Wen Tsau
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Abstract
A method of manufacturing a semiconductor device, and the method includes forming a stack of a work function layer, a blocking structure, and a metal cap layer sequentially on a substrate. The forming of the blocking structure includes sequentially depositing at least a metal diffusion prevention layer over the work function layer and an electrical performance enhancement layer over the metal diffusion prevention layer before forming the metal cap layer. The electrical performance enhancement layer includes a TiN layer having a Ti/N ratio greater than 1.
Claims19
A method of manufacturing a semiconductor device, said method comprising:
- forming a stack of a work function layer, a blocking structure, and a metal cap layer sequentially on a substrate;
- wherein the forming of the blocking structure comprises sequentially depositing at least a metal diffusion prevention layer over the work function layer and an electrical performance enhancement layer over the metal diffusion prevention layer before forming the metal cap layer, and the electrical performance enhancement layer comprises a TiN layer having a Ti/N ratio greater than 1.
A method comprising:
- forming a blocking structure in an opening, the opening being defined over a channel region in a substrate, the forming the blocking structure comprising:
- forming a first layer over the channel region, the first layer comprises a TiN layer having a Ti/N ratio greater than 1;
- and
- forming a second layer over the first layer, the second layer being configured as a diffusion barrier to a metallic material;
- and
- forming a metal layer over the blocking structure, the metal layer comprising the metallic material.
A method comprising:
- forming a dummy gate stack over a substrate;
- forming a layer of dielectric material surrounding the dummy gate stack;
- removing the dummy gate stack to define an opening;
- forming a blocking structure in the opening, the forming the blocking structure comprising:
- forming a first layer in the opening extending along a bottom surface and a sidewall of the opening, the first layer being configured to provide a stress to a channel region under the first layer, and the first layer comprising a TiN layer having a Ti/N ratio greater than 1;
- and
- forming a second layer in the opening extending along the bottom surface and the sidewall of the opening, the first layer being between the second layer and the bottom surface and the sidewall of the opening, and the second layer being configured as a diffusion barrier to a metallic material;
- and
- forming a metal layer in the opening, the metal layer comprising the metallic material, and the blocking structure being between the metal layer and the bottom surface and the sidewall of the opening.
Dependencies are inferred from the claim text.