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US 8,785,312 B2Granted
Conductive layers for hafnium silicon oxynitride
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Electronic apparatus and methods of forming the electronic apparatus include HfSiON for use in a variety of electronic systems. In various embodiments, conductive material is coupled to a dielectric containing HfSiON, where such conductive material may include one or more monolayers of titanium nitride, tantalum, or combinations of titanium nitride and tantalum.
Claims17
A method comprising:
- forming a dielectric including hafnium silicon oxynitride, the hafnium silicon oxynitride being HfxSiyOzNr with x>0, y>0, z>0, and r>0;
- forming the hafnium silicon oxynitride doped with one or more elements other than hafnium or silicon, such that the hafnium silicon oxynitride is maintained as a hafnium silicon oxynitride structure, by using a monolayer or partial monolayer sequencing process and by substituting a sequence of the one or more elements for a hafnium sequence of a plurality of hafnium sequences or substituting a sequence of the one or more elements for a silicon sequence of a plurality of silicon sequences in the monolayer or partial monolayer sequencing process such that the one or more elements are included in a completed structure of the hafnium silicon oxynitride;
- and
- forming a conductive material coupled to the dielectric.
1 more element
A method comprising:
- forming a memory having a dielectric including hafnium silicon oxynitride, the hafnium silicon oxynitride being HfxSiyOzNr with x>0, y>0, z>0, and r>0;
- forming the hafnium silicon oxynitride doped with one or more elements other than hafnium or silicon, such that the hafnium silicon oxynitride is maintained as a hafnium silicon oxynitride structure, by using a monolayer or partial monolayer sequencing process and substituting a sequence of the one or more elements for a hafnium sequence of a plurality of hafnium sequences or substituting a sequence of the one or more elements for a silicon sequence of a plurality of silicon sequences in the monolayer or partial monolayer sequencing process such that the one or more elements are included in a completed structure of the hafnium silicon oxynitride;
- and
- forming one or more of a titanium nitride or tantalum coupled to the dielectric.
1 more element
Dependencies are inferred from the claim text.