Method of forming conformal metal silicide films

A method of forming a metal silicide film on a substrate, comprising:

• a) providing the substrate in a process chamber;
• b) exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, wherein the plasma exposure deposits a conformal metal-containing layer on the substrate in a self-limiting process;
• c) exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, wherein b) and c) are alternatively performed at least once to form a metal film on the substrate, and wherein the deposition gas does not contain the reducing gas;
• and
• d) annealing the substrate at a third substrate temperature to form the metal silicide film, wherein the third substrate temperature is greater than the second substrate temperature.

A method of forming a metal silicide film on a substrate, comprising:

• a) providing a substrate in a process chamber;
• b) thermally exposing the substrate at a first substrate temperature to a deposition gas containing a metal precursor in the absence of a plasma, wherein the thermal exposure forms a conformal metal-containing layer on the substrate in a self-limiting process;
• c) modifying the metal-containing layer at a second substrate temperature by an exposure to a plasma consisting of only a noble gas;
• and
• d) exposing the modified metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, wherein the b)-d) are sequentially and alternatively performed at least once to form the metal silicide film.