P-I-N structures and methods for forming P-I-N structures having an i-layer formed via hot wire chemical vapor deposition (HWCVD)

Abstract

Embodiments of the present invention provide p-i-n structures and methods for forming p-i-n structures useful, for example, in photovoltaic cells. In some embodiments, a method for forming a p-i-n structure on a substrate may include forming a bi-layer p-type layer on the substrate by: depositing a microcrystalline p-type layer atop the protective layer; and depositing an amorphous p-type layer atop the microcrystalline p-type layer; depositing an amorphous i-type layer via hot wire chemical vapor deposition atop the amorphous p-type layer; and depositing an amorphous n-type layer atop the amorphous i-type layer. A p-i-n structure may include a bi-layer p-type layer disposed above a substrate, the bi-layer p-type layer having a microcrystalline p-type layer and an amorphous p-type layer disposed atop the microcrystalline p-type layer; an amorphous i-type layer disposed atop the bi-layer p-type layer; and an n-type layer disposed atop the i-type layer.

Dependencies are inferred from the claim text.