Methods for depositing amorphous silicon

A method for depositing an amorphous silicon layer, comprising:

• loading into a chamber a process wafer, a control wafer, and a dummy wafer, the dummy wafer including a silicon oxide layer;
• depositing an amorphous silicon layer on the process wafer;
• removing the process wafer and the control wafer from the chamber;
• dry cleaning the chamber and the dummy wafer;
• loading a second process wafer, and a second control wafer into the chamber;
• depositing an amorphous silicon layer on the second process wafer;
• removing the second process wafer and the second control wafer from the chamber;
• and
• dry cleaning the chamber and the dry cleaned dummy wafer.

A method for depositing an amorphous silicon layer, comprising:

• loading into a chamber a process wafer, a control wafer, and a dummy wafer, the dummy wafer including a silicon oxide layer;
• issuing by a computer system a control job comprising a first process job and a second process job, wherein the first process job is to deposit an amorphous silicon layer on the process wafer, and the second process job is to dry clean the chamber and the dummy wafer;
• depositing an amorphous silicon layer on the process wafer according to the first process job;
• removing the process wafer and the control wafer from the chamber;
• and
• dry cleaning the chamber and the dummy wafer according to the second process job.