Method of singulating a thin semiconductor wafer

A system for singulating a semiconductor wafer by partitioning it along a network of scribelines, the wafer having two substantially parallel major surfaces that are separated from one another by a thickness T<200 μm, said scribelines extending along a first of said major surfaces, the wafer being adhered to an elastic foil on a second of said major surfaces, comprising:

• a radiative scribing tool including a laser configured and arranged to generate a pulsed laser beam having a pulse duration P≦75 ps;
• a wafer table, constructed and arranged to hold the wafer such that the first major surface is exposed to the radiative scribing tool;
• an actuator, configured and arranged to cause the laser beam to relatively scan along each of said scribelines so as to create a radiative scribe with a depth D<T, thereby leaving the second major surface intact;
• and
• actuators constructed and arranged to laterally stretch said foil so as to sever the second major surface along the path of said radiative scribes.