Packaging method with backside wafer dicing
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsYan Xun Xue, Ping Huang, Yueh-Se Ho
Life of this patent
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Abstract
A packaging method with backside wafer dicing includes the steps of forming a support structure at the front surface of the wafer then depositing a metal layer on a center area of the backside of the wafer after grinding the wafer backside to reduce the wafer thickness; detecting from the backside of the wafer sections of scribe lines formed in the front surface in the region between the edge of the metal layer and the edge of the wafer and cutting the wafer and the metal layer from the wafer backside along a straight line formed by extending a scribe line section detected from the wafer backside.
Claims20
A packaging method with backside wafer dicing, wherein an active area of a semiconductor wafer comprises multiple semiconductor chips spaced-apart by scribe lines located at a front surface of the wafer, the method comprises the steps of:
- forming a support structure at the front surface of the wafer;
- grinding a backside opposite the front surface of the wafer to reduce a thickness of the wafer;
- depositing a metal layer on a centre area of the backside of the wafer after grinding, wherein a radius of the metal layer is less than a radius of the active area, thus forming a ring of bare wafer in the region between the edge of the metal layer and the edge of the wafer, wherein each scribe line in the front surface extending at least from a projection of the edge of the metal layer to the edge of the active area;
- detecting the scribe lines from the backside of the wafer;
- and
- cutting the wafer and the metal layer from the wafer backside along a straight line formed by extending a scribe line section detected from the wafer backside.
A packaging method with backside wafer dicing, wherein an active area of the wafer comprises a plurality of semiconductor chips spaced-apart by scribe lines located at a front surface of the wafer, the method comprises the steps of:
- forming a support structure at the front surface of the wafer;
- grinding a centre portion of a backside opposite the front surface of the wafer to form a cavity having a radius less than that of the active area of the wafer, wherein a ring is formed at the backside of the wafer in the region between the side wall of the cavity and the edge of the wafer;
- depositing a metal layer on a bottom of the cavity, wherein each scribe line in the front surface extending at least from a projection of the edge of the metal layer to the edge of the active area;
- detecting the scribe lines from the backside of the wafer;
- and
- cutting the wafer and the metal layer from the wafer backside along a straight line formed by extending a scribe line section detected from the wafer backside.
Dependencies are inferred from the claim text.