Silicon carbide lamina
AssigneeGTAT Corporation
InventorsVenkatesan Murali, Steve Babayan, Christopher J. Petti
Life of this patent
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Abstract
A method of fabricating an electronic device includes providing a silicon carbide or diamond-like carbon donor body and implanting ions into a first surface of the donor body to define a cleave plane. After implanting, an epitaxial layer is formed on the first surface, and a temporary carrier is coupled to the epitaxial layer. A lamina is cleaved from the donor body at the cleave plane, and the temporary carrier is removed from the lamina. In some embodiments a light emitting diode or a high electron mobility transistor is fabricated from the lamina and epitaxial layer.
Claims18
A method of fabricating an electronic device, the method comprising the steps of:
- providing a donor body having a first surface, wherein the donor body comprises silicon carbide or diamond-like carbon;
- implanting ions into the first surface of the donor body to define a cleave plane;
- after the step of implanting, forming an epitaxial layer on the first surface of the donor body using heteroepitaxy;
- coupling a temporary carrier to the epitaxial layer on the first surface of the donor body;
- cleaving a lamina from the donor body at the cleave plane, wherein the cleave plane forms a back surface of the lamina, wherein the first surface of the donor body is a front surface of the lamina, and wherein the lamina has a cleaved thickness from the front surface to the back surface;
- and
- removing the temporary carrier from the lamina.
Dependencies are inferred from the claim text.