Integrated decoupling capacitor employing conductive through-substrate vias

A method of forming a semiconductor structure comprising:

• providing a semiconductor chip including:
• providing a semiconductor substrate;
• forming at least one capacitor embedded in said semiconductor substrate, said at least one capacitor including an inner electrode comprising a conductive through-substrate via (TSV) structure;
• and
• forming at least one laterally-insulated conductive through-substrate connection structure, wherein said forming at least one laterally-insulated conductive through-substrate connection structure comprises:
• forming a dielectric tubular structure around a first through-substrate cavity formed in said semiconductor substrate,
• filling said first through-substrate cavity with a disposable material,
• removing said disposable material from said first through-substrate cavity within said dielectric tubular structure before forming said inner electrode of said at least one capacitor, and
• filling said cavity within said dielectric tubular structure with a conductive material;
• and
• electrically connecting said semiconductor chip to a mounting structure employing an array of solder balls.