Techniques for FinFET doping
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun Hsiung Tsai, Chien-Tai Chan, Mao-Rong Yeh, Da-Wen Lin
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Abstract
A method of forming an integrated circuit includes providing a semiconductor wafer including a semiconductor fin dispatched on a surface of the semiconductor wafer; forming a dopant-rich layer having an impurity on a top surface and sidewalls of the semiconductor fin, wherein the impurity is of n-type or p-type; performing a knock-on implantation to drive the impurity into the semiconductor fin; and removing the dopant-rich layer.
Claims18
A method of forming an integrated circuit, the method comprising:
- providing a semiconductor wafer comprising a semiconductor fin dispatched on a surface of the semiconductor wafer;
- forming a dopant-rich layer comprising an impurity on a top surface and sidewalls of the semiconductor fin, wherein the dopant-rich layer is a substantially pure layer comprising substantially pure n-type or p-type impurity;
- performing a knock-on implantation to drive the impurity into the semiconductor fin, wherein the knock-on implantation is performed using carbon, germanium, argon, or nitrogen to drive the impurity into the semiconductor fin;
- and
- removing the dopant-rich layer substantially completely.
A method of forming an integrated circuit, the method comprising:
- providing a semiconductor wafer comprising a semiconductor fin dispatched on a surface of the semiconductor wafer;
- forming a dopant-rich layer comprising an impurity on a top surface and sidewalls of the semiconductor fin, wherein the impurity is of n-type or p-type;
- performing a knock-on implantation to drive the impurity into the semiconductor fin, wherein the knock-on implantation forms a lightly-doped source/drain (LDD) region of a fin field-effect transistor (FinFET) in the semiconductor fin, wherein the knock-on implantation is performed using carbon, germanium, argon, or nitrogen to drive the impurity into the semiconductor fin;
- and
- removing the dopant-rich layer substantially completely.
A method of forming an integrated circuit, the method comprising:
- providing a semiconductor wafer comprising a semiconductor fin dispatched on a surface of the semiconductor wafer;
- foaming a dopant-rich layer comprising an impurity on a top surface and sidewalls of the semiconductor fin, wherein the impurity is of n-type or p-type;
- performing a knock-on implantation to drive the impurity into the semiconductor fin, wherein the knock-on implantation is performed using carbon, germanium, argon, or nitrogen to drive the impurity into the semiconductor fin;
- and
- removing the dopant-rich layer substantially completely.
Dependencies are inferred from the claim text.