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US 8,785,282 B2Granted
Two step poly etch LDMOS gate formation
AssigneeVolterra Semiconductor Corporation
InventorMarco A. Zuniga
Life of this patent
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Abstract
A method of making a transistor includes etching a first side of a gate, the gate including an oxide layer formed over a substrate and a conductive material formed over the oxide layer, the etching removing a first portion of the conductive material, implanting an impurity region into the substrate such that the impurity region is self-aligned, and etching a second side of the gate to remove a second portion of the conductive material.
Claims8
A method of making a integrated circuit, comprising:
- forming a plurality of LDMOS transistors on a substrate, each LDMOS transistor including a gate oxide layer comprising a first side closer to a source side of the LDMOS transistor and a second side closer to the drain side of the LDMOS transistor, the first side having a thickness of less than about 100 Å, and the second side having a thickness equal to or greater than 125 Å;
- forming a plurality of CMOS transistor on the substrate, wherein each CMOS transistor includes a gate oxide layer, and wherein forming the gate oxide layer of the CMOS transistor occurs simultaneously with forming the first side of the gate oxide layer of the LDMOS transistor.
Dependencies are inferred from the claim text.