Methods of manufacturing semiconductor devices including transistors
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-kweon Baek, Jin-soak Kim, Gab-jin Nam, Ji-young Min, Eun-ae Chang
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a gate insulation layer pattern on a substrate, forming a sacrificial layer including impurities on the gate insulation layer pattern, annealing the sacrificial layer so that the impurities in the sacrificial layer diffuse into the gate insulation layer pattern, removing the sacrificial layer, and forming a gate electrode on the gate insulation layer pattern.
Claims17
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulation layer on a substrate;
- forming a sacrificial layer doped with impurities on the gate insulation layer;
- annealing the sacrificial layer to cause the impurities in the sacrificial layer to diffuse into the gate insulation layer;
- removing the sacrificial layer;
- and
- forming a gate electrode on the gate insulation layer.
A method of manufacturing a semiconductor device, comprising:
- forming a trench on a substrate;
- forming a gate insulation layer on an inner wall of the trench;
- forming a sacrificial layer including impurities on the gate insulation layer;
- annealing the sacrificial layer to cause the impurities in the sacrificial layer diffuse into the gate insulation layer;
- removing the sacrificial layer;
- and
- forming a gate electrode on the gate insulation layer.
A method of manufacturing a semiconductor device including a high-k gate insulation layer, comprising:
- forming a buffer layer on the high-k gate insulation layer;
- forming a sacrificial layer containing impurities on the buffer layer;
- diffusing impurities from the sacrificial layer through the buffer layer and into the high-k gate insulation layer;
- removing the sacrificial layer;
- and
- forming a gate electrode on the buffer layer.
Dependencies are inferred from the claim text.