US 8,785,265 B2Granted

Semiconductor device and method for manufacturing the same

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorShunpei Yamazaki

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Abstract

An object to provide a material suitably used for used for a semiconductor included in a transistor, a diode, or the like, with the use of a sputtering method. Specifically, an object is to provide a manufacturing process an oxide semiconductor film having high crystallinity. By intentionally adding nitrogen to the oxide semiconductor, an oxide semiconductor film having a wurtzite crystal structure that is a hexagonal crystal structure is formed. In the oxide semiconductor film, the crystallinity of a region containing nitrogen is higher than that of a region hardly containing nitrogen or a region to which nitrogen is not intentionally added. The oxide semiconductor film having high crystallinity and having a wurtzite crystal structure is used as a channel formation region of a transistor.

Claims16

Dependent claims

A method for manufacturing a semiconductor device, comprising the steps of:

forming an insulating film containing nitrogen over a substrate including an insulating surface;
introducing the substrate over which the insulating film containing nitrogen is formed, into a vacuum chamber;
forming a first oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a first deposition condition that the substrate temperature is higher than or equal to 150° C. and lower than or equal to 450° C.;
forming a second oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a second deposition condition that the substrate temperature is higher than or equal to 150° C. and lower than or equal to 450° C.;
and
performing heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 650° C. after the deposition is performed under the second deposition condition,
wherein the first oxide semiconductor film to which the heat treatment is performed has a wurtzite crystal structure.

4 more elements

A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate including an insulating surface;
forming an insulating film containing nitrogen over the gate electrode layer;
introducing the substrate over which the gate electrode layer and the insulating film containing nitrogen are formed, into a vacuum chamber;
forming a first oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a first deposition condition that the substrate temperature is higher than or equal to 150° C. and lower than or equal to 450° C.;
forming a second oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a second deposition condition that the substrate temperature is higher than or equal to 150° C. and lower than or equal to 450° C.;
and
performing heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 650° C. after the deposition is performed under the second deposition condition,
wherein the first oxide semiconductor film to which the heat treatment is performed has a wurtzite crystal structure.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/089,986Filed 26 Nov 2013 · division
Priority: JP 2010-26790630 Nov 2010
Published: US 2014/0087516 A127 Mar 2014
Granted: 22 Jul 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 99/00
Subject matter not provided for in other groups of this subclass
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10P 14/22
Of semiconductor materials: using physical deposition, e.g. vacuum deposition or sputtering
H10P 14/2922
Materials: being non-crystalline insulating materials, e.g. glass or polymers

Family

Application13/297,476Parent of this division · filed 16 Nov 2011
US 2014/0087516 A1Pre-grant publication · published 27 Mar 2014
US 2012/0132904 A1Published application
US 8,629,496 B2Related patent
US 8,785,265 B2This patent

From the US filing history. Foreign family members aren’t listed.

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