US 8,785,259 B2Granted

Organic transistor, manufacturing method of semiconductor device and organic transistor

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsRyota Imahayashi, Shinobu Furukawa, Atsuo Isobe, Yasuyuki Arai, Shunpei Yamazaki

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Abstract

It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.

Claims21

Dependent claims

A method for manufacturing an organic transistor, the method comprising the steps of:

forming a first conductive layer over a substrate;
performing plasma treatment on a surface of the first conductive layer to form a gate insulating film, wherein the plasma treatment is performed with density of electron of 1011 cm−3 or more and an electron temperature in a range of 0.2 eV to 2.0 eV;
forming a second conductive layer over and in contact with the gate insulating film;
forming a first composite layer over and in contact with the second conductive layer and the gate insulating film;
forming a second composite layer over and in contact with the first composite layer and the gate insulating film;
and
forming an organic semiconductor layer over and in contact with the second composite layer and the gate insulating film,
wherein the first composite layer comprises a first organic compound and a metal oxide which are mixed with each other,
wherein the second composite layer comprises a second organic compound and a metal selected from an alkali metal and an alkaline-earth metal, and
wherein the first organic compound and the second organic compound are different from each other.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/722,028Filed 20 Dec 2012 · division
Priority: JP 2005-12593025 Apr 2005
Published: US 2013/0105784 A12 May 2013
Granted: 22 Jul 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10K 10/462
Field-effect transistors, e.g. organic thin-film transistors [OTFT]: insulated gate field-effect transistors [IGFETs]
H10K 10/464
Insulated gate field-effect transistors [IGFETs]: lateral top-gate IGFETs comprising only a single gate
H10K 10/466
Insulated gate field-effect transistors [IGFETs]: lateral bottom-gate IGFETs comprising only a single gate
H10K 71/10
Manufacture or treatment specially adapted for the organic devices covered by this subclass: deposition of organic active material

Family

Application11/405,514Parent of this division · filed 18 Apr 2006
Application12/850,652Parent of this division · filed 5 Aug 2010
US 2013/0105784 A1Pre-grant publication · published 2 May 2013
US 8,343,816 B2Parent of this division
US 2006/0270066 A1Published application
US 2010/0297809 A1Published application
US 8,785,259 B2This patent

From the US filing history. Foreign family members aren’t listed.

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