Method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
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Abstract
A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In the semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and an aluminum film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in such a manner that oxygen is introduced to the insulating layer and the aluminum film from a position above the aluminum film, whereby a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the aluminum film is oxidized to form an aluminum oxide film.
Claims16
A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode layer;
- forming a gate insulating layer over the gate electrode layer;
- forming an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed therebetween;
- forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer:
- forming an insulating layer over the source electrode layer and the drain electrode layer and in contact with the oxide semiconductor layer;
- forming an aluminum film in contact with the insulating layer;
- and
- performing an oxygen doping treatment on the insulating layer and the aluminum film, so that at least a portion of the aluminum film is oxidized to be an aluminum oxide film.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode layer;
- forming a gate insulating layer over the gate electrode layer;
- performing heat treatment on the gate insulating layer to reduce hydrogen in the gate insulating layer;
- forming an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed therebetween;
- forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer:
- forming an insulating layer over the source electrode layer and the drain electrode layer and in contact with the oxide semiconductor layer;
- forming an aluminum film in contact with the insulating layer;
- and
- performing an oxygen doping treatment on the insulating layer and the aluminum film, so that at least a portion of the aluminum film is oxidized to be an aluminum oxide film.
Dependencies are inferred from the claim text.