Method for manufacturing a thin film transistor array panel

Abstract

A method for manufacturing a thin film transistor array panel according to an exemplary embodiment of the present invention includes, forming a gate electrode, a gate insulating layer, and an oxide semiconductor layer on a substrate, first heat treating the substrate comprising the oxide semiconductor layer, forming a source electrode and a drain electrode on the oxide semiconductor layer, the source and drain electrodes facing each other, and forming a passivation layer on the source electrode and the drain electrode. The first heat treating is performed at more than 1 atmosphere and at most 50 or less atmospheres.

Dependencies are inferred from the claim text.