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US 8,785,239 B2Granted
Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry
AssigneeMicron Technology, Inc.
InventorsTimothy A. Quick, Eugene P. Marsh
Life of this patent
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Abstract
A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
Claims12
A method of depositing a phase-change material onto a substrate, comprising:
- providing a vaporized compound consisting of Sb(OR)3 to a substrate, where R is alkyl and Sb(OR)3 is selected from the group consisting of Sb(OC2H5)3, Sb(OCH3)3, Sb(OC3H7)3 and Sb(OC4H9)3;
- forming a monolayer comprising Sb(OR)x onto the substrate where x is less than 3;
- after forming the monolayer, providing a reducing agent to the monolayer;
- utilizing the Sb(OR)3 to form an antimony-comprising phase change material.
1 more element
A method of forming phase change memory circuitry, comprising:
- forming an electrode material over the substrate;
- providing a vaporized compound consisting of Sb(OR)3 over the electrode material, where R is alkyl and Sb(OR)3 is selected from the group consisting of Sb(OC2H5)3, Sb(OCH3)3, Sb(OC3H7)3 and Sb(OC4H9)3;
- forming a monolayer comprising Sb(OR)x onto the substrate, where x is less than 3;
- after forming the monolayer, providing a reducing agent to the monolayer;
- forming an Sb-comprising phase change material utilizing the Sb(OR)3 over the electrode material;
- and
- forming an outer electrode material over the phase change material.
4 more elements
Dependencies are inferred from the claim text.