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US 8,785,237 B2Granted
Method of forming variable resistance memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Hyun Im, Hyeonggeun An, Sunglae Choi, Ik Soo Kim
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Abstract
A method of forming a variable resistance memory device includes forming an opening in an insulating layer, and forming a variable resistance layer by filling the opening with an antimony rich antimony-tellurium compound.
Claims18
A method of forming a variable resistance memory device comprising:
- forming electrically insulating material having an opening therein on an upper surface of a substrate,
- wherein the opening has depth in a direction perpendicular to the upper surface of the substrate, length in a first direction parallel to the upper surface, and width in a second direction parallel to the upper surface and perpendicular to the first direction, and
- the opening is oblong in a bird's eye view in the first direction parallel to the upper surface of the substrate;
- and
- filling the opening completely with material, comprising antimony and tellurium, while the material is in an amorphous state to thereby form a variable resistance layer, in the opening, which is also oblong in a bird's eye view in the first direction parallel to the upper surface of the substrate,
- wherein the filling of the opening completely comprises depositing an antimony-tellurium compound, comprising SbxTe1-x(0.5≦x<1), on the substrate to form a layer of the compound that is buried in the opening.
3 more elements
A method of forming a variable resistance memory device comprising:
- forming a first mold insulating layer defining a first trench extending longitudinally in a first direction, on a substrate;
- forming a lower electrode layer along a side of the first trench;
- forming a second mold insulating layer that fills the first trench while the lower electrode layer is disposed along the side of the first trench;
- forming a second trench that extends longitudinally across the first trench in a second direction by patterning the first and second mold insulating layers and the lower electrode layer;
- forming a third mold insulating layer that fills the second trench, the first, second and third mold insulating layers constituting a layer of electrically insulating material;
- forming a recess in the patterned lower electrode layer;
- and
- depositing amorphous material, comprising antimony and tellurium, into the recess to thereby form a variable resistance layer, comprising an antimony-tellurium compound, in the recess.
5 more elements
A method of forming a variable resistance memory device comprising:
- forming a first mold insulating layer defining a first trench extending longitudinally in a first direction, on a substrate;
- forming a lower electrode layer along a side of the first trench;
- forming a second mold insulating layer that fills the first trench while the lower electrode layer is disposed along the side of the first trench;
- forming a second trench that extends longitudinally across the first trench in a second direction by patterning the first and second mold insulating layers and the lower electrode layer;
- forming a third mold insulating layer that fills the second trench, the first, second and third mold insulating layers constituting a layer of electrically insulating material;
- forming a recess in the patterned lower electrode layer;
- and
- forming a variable resistance layer, comprising an antimony rich antimony-tellurium compound, in the recess.
5 more elements
Dependencies are inferred from the claim text.