Method of making semiconductor device

A method of making a semiconductor device comprising steps of:

• (A) preparing a sensor wafer having one side and including a plurality of sensor portions, each sensor portion having one surface on the one side of the sensor wafer and including a sensor structure at a surface portion of the surface;
• (B) preparing a cap wafer having a front side and a back side opposite to the front side, the cap wafer including a plurality of cap portions, each cap portion having a first surface on the front side of the cap wafer and a second surface on the back side of the cap wafer;
• (C) forming a wiring layer on the first surface of the cap portion;
• (D) forming a cover insulation layer on the first surface of the cap portion and covering the wiring layer on an upper surface and side surfaces:
• (E) forming a trench on the first surface of the cap portion;
• (F) forming a trench wall insulation layer on a wall of the trench;
• (G) forming a buried electrode on the trench wall insulation layer;
• (H) joining the one side of the sensor wafer to the front side of the cap wafer together with interposing the cover insulation between the wiring layer and the sensor structure, electrically connecting the buried electrode of the cap portion to a contact region of the sensor structure of the sensor portion and sealing the sensor structure between the sensor portion and the cap portion;
• (I) removing the backside of the cap wafer and exposing a new surface including the trench and the buried electrode and forming a through hole and a through electrode extending from the first surface to the second surface of the cap portion;
• and
• (J) dividing a joined body of the sensor wafer and the cap wafer into a plurality of semiconductor devices in the form of chips after the forming of the through electrode.