Method of fabricating fringe field switching liquid crystal display device

A method of fabricating a fringe field switching (FFS)-liquid crystal display (LCD) device, comprising:

• forming a gate electrode and a gate line on a first substrate;
• forming a gate insulation film, an amorphous silicon thin film, an n+ amorphous silicon thin film and a second conductive film on the first substrate where the gate electrode and the gate line have been formed;
• forming first to third photosensitive film patterns on the second conductive film;
• selectively removing the second conductive film, through a wet etching, by using the first to third photosensitive film patterns as a mask, thereby disposing a conductive film pattern formed of the second conductive film;
• selectively removing the amorphous silicon thin film and the n+ amorphous silicon thin film, through a dry etching, by using the first to third photosensitive film patterns as a mask, thereby disposing an active layer and an n+ amorphous silicon thin film pattern formed of the amorphous silicon thin film and the n+ amorphous silicon thin film, below the conductive film pattern;
• removing the third photosensitive film pattern through an ashing process, and forming fourth and fifth photosensitive film patterns having a thickness removed by a thickness of the third photosensitive film pattern;
• selectively removing the conductive film pattern, through a wet etching, by using the fourth and fifth photosensitive film patterns as a mask, thereby disposing source and drain electrodes formed of the second conductive film on the n+ amorphous silicon thin film pattern;
• removing the fourth and fifth photosensitive film patterns;
• forming a third conductive film on an entire surface of the first substrate;
• forming a photosensitive film pattern on the third conductive film;
• selectively removing the third conductive film, through a wet etching, by using the photosensitive film pattern as a mask, thereby disposing a pixel electrode directly electrically connected to the drain electrode and formed of the third conductive film;
• selectively removing the n+ amorphous silicon thin film pattern, through a dray etching, thereby disposing an ohmic-contact layer formed of the n+ amorphous silicon thin film;
• removing the photosensitive film pattern;
• forming a passivation film on the first substrate where the pixel electrode has been formed;
• forming a common electrode formed in a single pattern over a pixel portion, and configured to generate a fringe field with a plurality of slits in each pixel region together with the pixel electrode;
• and
• bonding the first substrate to a second substrate.