Method for making light emitting diode

A method for making a light emitting diode, comprising:

• providing a substrate have an epitaxial growth surface;
• growing a first semiconductor layer on the epitaxial growth surface of the substrate;
• locating a patterned mask layer on a surface of the first semiconductor layer, wherein the patterned mask layer comprises a plurality of bar-shaped protruding structures aligned side by side, and a slot is defined between each two adjacent protruding structures of the plurality of bar-shaped protruding structures to expose a portion of the first semiconductor layer;
• etching the exposed portions of the first semiconductor layer, wherein each two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair;
• forming a plurality of three-dimensional nano-structures by removing the patterned mask layer;
• growing an active layer and a second semiconductor layer on a surface of the plurality of three-dimensional nano-structures in that order;
• applying a first electrode electrically to connect with the first semiconductor layer;
• and
• locating a second electrode electrically to connect with the second semiconductor layer.