Method of fabricating non-volatile memory device having small contact and related devices

A method of fabricating a non-volatile memory device, comprising:

• forming a molding layer on a substrate;
• forming a plurality of contact holes in the molding layer;
• forming lower electrodes on sidewalls of the contact holes;
• forming a plurality of core patterns, each core pattern filling a contact hole of the contact holes, respectively;
• forming sacrificial spacers that extend across the contact holes and parallel to one another;
• primarily trimming the lower electrodes, the core patterns, and the molding layer in a first direction using the sacrificial spacers as a mask to form a plurality of first grooves, wherein first portions of the lower electrodes and second portions facing the first portions are retained under the sacrificial spacers;
• forming first insulating patterns in the first grooves;
• secondarily trimming the sacrificial spacers, the first insulating patterns, the second portions of the lower electrodes, the core patterns, and the molding layer in a second direction orthogonal to the first direction to form a plurality of second grooves;
• forming second insulating patterns in the second grooves;
• removing the sacrificial spacers to form trenches exposing the first portions of the lower electrodes;
• and
• forming data storage plugs within the trenches, wherein the data storage plugs are respectively formed between the first insulating patterns and the second insulating patterns.

A method of fabricating a non-volatile memory device, comprising:

• forming a pipe-shaped electrode on a substrate having a word line;
• forming a sacrificial pattern to partially cover the pipe-shaped electrode;
• forming a sacrificial spacer on a lateral surface of the sacrificial pattern, the sacrificial spacer extending across the pipe-shaped electrode, the sacrificial spacer having a first side and a second side opposite the first side;
• removing the sacrificial pattern to expose the pipe-shaped electrode proximal to the first and second sides of the sacrificial spacer;
• primarily trimming the pipe-shaped electrode exposed proximal to the first and second sides of the sacrificial spacer, wherein the pipe-shaped electrode is retained under the sacrificial spacer to form a first portion and a second portion facing the first portion;
• secondarily trimming the second portion of the pipe-shaped electrode;
• removing the sacrificial spacer to expose the first portion of the pipe-shaped electrode;
• and
• forming a data storage plug on the first portion of the pipe-shaped electrode.