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US 8,785,115 B2Granted
Photoresist removal method and patterning process utilizing the same
AssigneeUnited Microelectronics Corp.
InventorsHung-Yi Wu, Yuan-Chi Pai, Yu-Wei Cheng, Chang-Mao Wang
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Abstract
A photoresist removal method is described. A substrate having thereon a positive photoresist layer to be removed is provided. The positive photoresist layer is UV-exposed without using a photomask. A development liquid is used to remove the UV-exposed positive photoresist layer. The substrate as provided may further have thereon a sacrificial masking layer under the positive photoresist layer. The sacrificial masking layer is removed after the UV-exposed positive photoresist layer is removed.
Claims16
A photoresist removal method, comprising:
- providing a substrate having thereon a patterned positive photoresist layer to be removed and a patterned sacrificial masking layer between the patterned positive photoresist layer and the substrate;
- UV-exposing the patterned positive photoresist layer without using a photomask;
- using a development liquid to remove the UV-exposed patterned positive photoresist layer;
- and
- removing the patterned sacrificial masking layer.
2 more elements
A patterning process, comprising:
- providing a substrate having thereon a material layer to be patterned;
- forming a sacrificial masking layer over the material layer;
- forming a patterned positive photoresist layer over the sacrificial masking layer;
- patterning the sacrificial masking layer using the patterned positive photoresist layer as a mask;
- removing the material layer not under the patterned positive photoresist layer;
- UV-exposing the patterned positive photoresist layer without using a photomask;
- and
- using a development liquid to remove the UV-exposed patterned positive photoresist layer;
- and
- removing the patterned sacrificial masking layer.
7 more elements
Dependencies are inferred from the claim text.