Reflective mask blank, method of manufacturing the same, and reflective mask

A reflective mask blank for manufacturing a reflective mask, comprising:

• a substrate;
• a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light;
• an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light;
• and
• a resist film for electron beam writing which is formed on the absorber film;
• wherein an exposure latitude of the resist film is 0.7 nm/% dose or less.

A method of manufacturing a reflective mask, comprising the steps of:

• preparing a reflective mask blank for manufacturing a reflective mask, the reflective mask blank comprising a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light, and a resist film for electron beam writing on the absorber film;
• and
• forming a resist pattern by the electron beam writing;
• wherein a contrast value γ of the resist film is 30 or less.

A method of manufacturing a reflective mask, comprising the steps of:

• preparing a reflective mask blank for manufacturing a reflective mask, the reflective mask blank comprising a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light, and a resist film for electron beam writing on the absorber film;
• and
• forming a resist pattern by the electron beam writing;
• wherein an exposure latitude of the resist film is 0.7 nm/% dose or less.