Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
AssigneeLam Research Corporation
InventorsRajinder Dhindsa, Jerrel K. Antolik, Scott Stevenot
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AssigneeLam Research Corporation
InventorsRajinder Dhindsa, Jerrel K. Antolik, Scott Stevenot
Estimating the term…
Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
A method of controlling gas flow conductance in a plasma processing chamber including an upper electrode disposed opposite a lower electrode with a gap therebetween, the lower electrode adapted to support a substrate, the apparatus comprising a ground ring configured to concentrically surround the lower electrode, the ground ring including a first set of slots formed therein, a bypass choke ring, a cover ring disposed over the ground ring and bypass choke ring, the cover ring including a second set of slots formed therein, and an actuation mechanism adapted to move the bypass choke ring relative to the ground ring to control gas flow conductance through the first and second sets of slots between (i) an ON state in which the first set of slots is in fluid communication with the second set of slots such that gas can flow through the first and second sets of slots and (ii) an OFF state in which the first set of slots is blocked by the bypass choke ring such that gas cannot flow through the first and second sets of slots, the method comprising:
A method of controlling gas flow conductance in a plasma processing chamber including an upper electrode disposed opposite a lower electrode with a gap therebetween, the lower electrode adapted to support a substrate, the apparatus comprising a ground ring configured to concentrically surround the lower electrode, the ground ring including a first set of slots formed therein, a bypass choke ring, a cover ring disposed over the ground ring and bypass choke ring, the cover ring including a second set of slots formed therein, and an actuation mechanism adapted to move the bypass choke ring relative to the ground ring to control gas flow conductance through the first and second sets of slots between (i) an ON state in which the first set of slots is in fluid communication with the second set of slots such that gas can flow through the first and second sets of slots and (ii) an OFF state in which the first set of slots is blocked by the bypass choke ring such that gas cannot flow through the first and second sets of slots, the method comprising:
Dependencies are inferred from the claim text.