Back to results
US 8,784,700 B2Granted
Sputtering target and oxide semiconductor film
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuyoshi Inoue, Koki Yano, Futoshi Utsuno
Life of this patent
Estimating the term…
Abstract
A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa2O4 and a compound shown by InGaZnO4.
Claims10
A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which comprises a spinel structure compound shown by ZnGa2O4 and a homologous structure compound shown by InGaO3(ZnO)m wherein m is an integer of 1 to 20, and wherein the atomic ratio shown by In/(In+Ga+Zn) and the atomic ratio shown by Ga/(In+Ga+Zn) satisfy the following relationship:
- In/(In+Ga+Zn)>Ga/(In+Ga+Zn),
- in the form of a sputtering target.
Dependencies are inferred from the claim text.