In-Ga-Zn-type oxide, oxide sintered body, and sputtering target
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKoki Yano, Masayuki Itose, Hirokazu Kawashima
Life of this patent
Estimating the term…
Abstract
An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.
Claims11
An oxide comprising indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.
Dependencies are inferred from the claim text.