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US 8,784,672 B2Granted
Photomasks and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-Keun Oh, Dae-Hyuk Kang, Chan-Uk Jeon, Hyung-Ho Ko, Sung-Jae Han, Jung-Jin Kim
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Abstract
In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern.
Claims14
A method of manufacturing a photomask, comprising:
- forming a light-shielding layer pattern and an anti-reflective layer pattern sequentially on a transparent substrate;
- and
- performing an oxidation and a nitridation on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern using oxygen (O2) gas and nitrogen (N2) gas, wherein a mixing ratio of the oxygen gas and the nitrogen gas is within about 1:5 to about 1:8.
A method of manufacturing a photomask, comprising:
- forming a light-shielding layer composed of chromium (Cr) on a transparent substrate;
- forming an anti-reflective layer composed of chromium oxide (CrOx) on the light-shielding layer;
- partially etching the anti-reflective layer and the light-shielding layer to form a light-shielding layer pattern and an anti-reflective layer pattern sequentially stacked on the transparent substrate;
- and
- performing an oxidation and a nitridation on a sidewall of the light-shielding layer pattern using oxygen (O2) gas and nitrogen (N2) gas in a chamber maintained at a temperature of about 200° C. to about 400° C. to form a protection layer pattern composed of either chromium oxynitride (CrNOx), or a mixture of chromium oxide (CrOx) and chromium nitride (CrNx) on a lateral portion of the light-shielding layer pattern, and wherein the protection layer pattern has a thickness of about 0.1 nm to about 50 nm, and wherein a mixing ratio of the oxygen (O2) gas and the nitrogen (N2) gas is within about 1:5 to about 1:8.
2 more elements
Dependencies are inferred from the claim text.