Semiconductor device and electronic device having the same

A semiconductor device comprising:

• a first layer comprising a first transistor;
• a first connection terminal connected with said first transistor and provided on said first layer comprising said first transistor;
• a second layer comprising a second transistor;
• a second connection terminal provided on a first surface of said second layer comprising said second transistor;
• a third connection terminal provided on a second surface of said second layer opposite to said first surface;
• a first organic resin layer comprising a first conductive particle dispersed in a first adhesive resin and connecting said first connection terminal with said second connection terminal by the first conductive particle;
• an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer;
• and
• a second organic resin layer comprising a second conductive particle dispersed in a second adhesive resin and connecting said third connection terminal with said antenna by the second conductive particle,
• wherein the first conductive layer is formed on a first surface of the dielectric layer,
• wherein the second conductive layer is formed on a second surface of the dielectric layer, and
• wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.

A semiconductor device comprising:

• a first layer comprising a first transistor;
• a first connection terminal connected with said first transistor and provided on said first layer comprising said first transistor;
• a second layer comprising a second transistor;
• a second connection terminal provided on a first surface of said second layer comprising said second transistor;
• a third connection terminal provided on a second surface of said second layer opposite to said first surface;
• a first organic resin layer comprising a first conductive particle dispersed in a first adhesive resin and connecting said first connection terminal with said second connection terminal by the first conductive particle;
• a layer comprising a passive element selected from the group consisting of inductor, capacitor and resistor;
• a fourth connection terminal provided on a first surface of said layer comprising said passive element;
• a fifth connection terminal provided on a second surface of said layer comprising said passive element opposite to said first surface of said layer comprising said passive element;
• a second organic resin layer comprising a second conductive particle dispersed in a second adhesive resin and connecting said third connection terminal with said fourth connection terminal by the second conductive particle;
• an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer;
• and
• a connection layer electrically connecting said fifth connection terminal with said antenna,
• wherein the first conductive layer is formed on a first surface of the dielectric layer,
• wherein the second conductive layer is formed on a second surface of the dielectric layer, and
• wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.

A semiconductor device comprising:

• a layer comprising a first transistor and a second transistor and a first antenna connected with said first transistor;
• a connection terminal connected with said second transistor and provided on said layer comprising said first transistor and said second transistor and said first antenna;
• a second antenna comprising a power feeding laver, a first conductive layer and a second conductive layer functioning as a ground body, said second antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer;
• and
• an organic resin layer comprising a conductive particle dispersed in an adhesive resin and connecting said connection terminal with said second antenna by the conductive particle,
• wherein the first conductive layer is formed on a first surface of the dielectric layer,
• wherein the second conductive layer is formed on a second surface of the dielectric layer, and
• wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.

A semiconductor device comprising:

• a layer comprising a first transistor and a second transistor;
• a first connection terminal connected with said first transistor and provided on a first surface of said layer comprising said first transistor and said second transistor;
• a second connection terminal connected with said second transistor and provided on a second surface of said layer comprising said first transistor and said second transistor opposite to said first surface;
• a first antenna comprising a first power feeding layer, a first conductive layer and a second conductive layer functioning as a first ground body, said first antenna further comprising a first dielectric layer provided between said first conductive layer and said second conductive layer;
• a second antenna comprising a second power feeding layer, a third conductive layer and a fourth conductive layer functioning as a second ground body, said second antenna further comprising a second dielectric layer provided between said third conductive layer and said fourth conductive layer;
• a first organic resin layer comprising a first conductive particle dispersed in a first adhesive resin and connecting said first antenna with said first connection terminal by the first conductive particle;
• and
• a second organic resin layer comprising a second conductive particle dispersed in a second adhesive resin and connecting said second antenna with said second connection terminal by the second conductive particle,
• wherein the first conductive layer is formed on a first surface of the first dielectric layer,
• wherein the second conductive layer is formed on a second surface of the first dielectric layer,
• wherein the first power feeding layer is formed on a side, the first and the second surface of the first dielectric layer,
• wherein the third conductive layer is formed on a first surface of the second dielectric layer,
• wherein the fourth conductive layer is formed on a second surface of the second dielectric layer,
• wherein the second power feeding layer is formed on a side, the first and the second surface of the second dielectric layer.

A semiconductor device comprising:

• a layer comprising a transistor;
• a connection terminal connected with said transistor and provided on said layer comprising said transistor;
• an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer;
• and
• an organic resin layer comprising a conductive particle dispersed in an adhesive resin and connecting said antenna with said connection terminal by the conductive particle,
• wherein the first conductive layer is formed on a first surface of the dielectric layer,
• wherein the second conductive layer is formed on a second surface of the dielectric layer, and
• wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer.