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US 8,772,911 B2Granted
Semiconductor diode and method for producing a semiconductor diode
AssigneeOSRAM Opto Semiconductors GmbH
InventorsTony Albrecht, Markus Maute, Martin Reufer, Heribert Zull
Life of this patent
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Abstract
A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region (106) has the first conductivity type. A method for producing such a semiconductor diode is described.
Claims6
A semiconductor diode comprising:
- a semiconductor body having a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type having a doping,
- wherein the second semiconductor layer has a vertical electrical via region which is connected to the first semiconductor layer and in which the doping is modified such that the electrical via region has the first conductivity type, and
- wherein the electrical via region extends along the outer edges of the mesa lateral surfaces of the semiconductor body.
Dependencies are inferred from the claim text.